In this laboratory, various materials that have been prepared by different synthetic routes are characterized for use in making devices. Mainly nanostructured materials are considered for electrical characterization. They primarily, but not restricted to, consist of metallic thin films (prepared by rf and dc sputtering and thermal evaporation), metal oxide nanostructures, transition metal dichalcogenides (prepared by chemical and mechanical exfoliation, chemical vapor deposition) and their heterostructures.
In principle, the following investigations are made:
1. Investigation of contact resistance at metal-oxide and metal-semiconductor interfaces.
2. Current-voltage response of high and low resistive nanostructured materials.
3. Hall effect studies to predict carrier density and mobility helping to understand the role of electron or hole in governing electron transport in nanostructured devices.
Block A, Ground Floor, Room: A010